note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0105b doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / SFT4100 __ __ scre ening 2 / __ = not screen tx = tx level txv = txv level s = s level package 3 / /3 = to-3 s1 = smd1 m = to254 SFT4100 series 15 amp high speed npn transistor 200 volts features: ? fast switching, t f = 60 nsec typ. ? very low leakage and saturation ? bvceo 165 volts min ? high linear gain ? 200oc operating temperature ? gold eutectic die attach ? available in hermetic isolated and ?hot case? power packages ? higher current devices available maximum ratings symbol value units collector ? emitter voltage v ceo 165 volts collector ? base voltage v cbo 250 volts emitter ? base voltage v ebo 7 volts continues collector current i c 15 amps base current i b 3 amps power dissipation @ tc = 25oc p d 120 w operating & storage temperature top & tstg -65 to +200 oc maximum thermal resistance junction to case r jc 1.46 oc/w notes: * pulse test: pulse width = 300sec, duty cycle = 2% 1 / for ordering information, price, and availability contact factory. 2 / screening to mil-prf-19500 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25oc. to-3 smd1 to-254
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0105b doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT4100 series electrical characteristic 4 / symbol min typ max units collector ? emitter breakdown voltage i c = 200ma bv ceo 165 200 ?? volts collector ? base breakdown voltage i c = 200a bv cbo - 250 ?? volts emitter ? base breakdown voltage i e = 50ma bv ebo 7 15 ?? volts collector ? cutoff current v ce = 160 v i ceo ?? 0.03 1000 ua collector ? cutoff current v ce = 250 v, v eb = 1.5 v v ce =250v, v eb =1.5v, t c = 125c i cex ?? 0.01 1.0 1000 5000 ua emitter ? cutoff current v eb = 5 v i ebo ?? 0.01 1000 ua dc current gain * v ce = 4v, i c = 5a v ce = 4v, i c = 8a h fe 15 8 30 30 45 ?? ?? collector ? emitter saturation voltage * i c = 5.0a, i b = 500ma i c = 8.0a, i b = 1.0a v ce(sat) ?? ?? 0.25 0.35 1.2 1.6 volts base ? emitter saturation voltage * i c = 8.0a, i b = 1.0a v be(sat) ?? 1.12 2.0 volts current gain bandwidth product v ce = 15v, i c = 1.0a, f = 10mhz f t 8 20 ?? mhz clamped e s/b collector current v clamp = 200v, l = 500 uh 8 a safe operating area v ce = 30v, i c = 4.0a, t = 1s v ce = 135v, i c = 0.15a, t= 1s soa1 soa2 on time t on ?? 100 1000 nsec storage time t s ?? 1200 1700 nsec fall time v cc = 150v, i c = 8a, i b1 = i b2 = 1a t f ?? 60 800 nsec case outlines: to-3 smd1 to-254
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